s m d g e n e r a l p u r p o s e r e c t i f i e r s glass passivated t ype reverse v oltage: 50 to 1000 v olts forward current: 2.0 amp rohs device page 1 rev :a features -ideal for surface mount applications. -easy pick and place. -plastic package has underwriters lab. flammability classification 94v -0. -built in strain relief. -high surge current capability . mechanical data -case: jedec do-214aa, molded plastic. -t erminals: solderable per mil-std-750, method 2026. -polarity: color band denotes cathode end. -approx. weight: 0.093 grams cgrb301-g thru. cgrb307-g d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r ) d o - 2 1 4 a a ( s m b ) qw -bg004 2 no tes : 1. th erm al r esi sta nce fro m jun ctio n t o t erm ina l m oun ted on p .c. b. wit h 5 .0 5.0 m m squ are (0 .13 mm th ick ) la nd are a. comchip t echnology co., l td. 0.155(3.94) 0.130(3.30) 0.083(2.1 1) 0.075(1.91) 0.220(5.59) 0.200(5.08) 0.012(0.31) 0.006(0.15) 0.008(0.20) 0.004(0.10) 0.050(1.27) 0.030(0.76) 0.096(2.44) 0.083(2.13) 0.185(4.70) 0.160(4.06) maximum ratings and electrical characteristics cgrb 301-g max. repetitive peak reverse voltage max. dc blocking voltage max. rms voltage peak surge forward current, 8.3ms single half sine-wave superimposed on rate load (jedec method) max. average forward current max. instantaneous forward at 3.0a o max. dc reverse current at t a =25 c o rated dc blocking voltage t a =125 c max. thermal resistance (note 1) max. operating junction temperature storage temperature voltage cgrb 302-g cgrb 303-g cgrb 304-g cgrb 305-g units symbol parameter v rrm v dc v rms i fsm i o v f i r r ja t j t stg 50 50 35 100 100 70 200 200 140 400 400 280 100 3.0 1.1 5.0 150 50 150 -55 to +150 600 600 420 v v v a a v a o c/w o c o c cgrb 306-g cgrb 307-g 800 800 560 1000 1000 700
qw -bg004 ra ting and characteristic cur ves (cgrb301-g thru cgrb307-g) percent of rated peak reverse v oltage (%) 120 80 40 0 fig.1 reverse characteristics 0.01 1 10 100 1000 r e v e r e u r r n ( ) s c e t a forward v oltage (v) 0 fig.2 forward characteristics 0.01 o w r d c r r e n ( a ) f r a u t 0.1 1 10 0.2 reverse v oltage (v) 0.1 fig.3 junction capacitance 1 j n t i n a p a c i a n c e ( p ) u c o c t f 10 100 1 10 100 o ambient t emperature ( c) fig.4 current derating curve 0 a v e r a g e f o r w a r d c u r r e n t ( a ) 1.5 2.0 3.5 comchip t echnology co., l td. page 2 rev :a 0.4 0.8 1.4 1.2 0 25 175 0.5 3.0 60 140 1.0 s m d g e n e r a l p u r p o s e r e c t i f i e r s 20 100 0.1 0.6 1.0 o t j =25 c f=1mhz vsig=50mvp-p 50 75 100 125 150 2.5 single phase, half wave 60hz, resistive or inductive load number of cycles at 60hz 1 fig.5 non-repetitive forward surge current 0 a f r a u c r ) p e k o w r d s r g e u r e n t ( a 60 120 10 100 o t j =25 c 8.3ms single half sine wave, jedec method 20 40 100 80 o t j =125 c o t j =25 c o t j =25 c pulse width 300 s 4% duty cycle
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